YUAN Fang-Yu, HUANG Yi-Zhi, ZHANG Hao, ZHOU An-Yi, CHENG Wen-Dan and LIN Chen-Sheng*

Cite this article: Chin. J. Struct. Chem. 2021, 40, 962-966  DOI: 10.14102/j.cnki.0254-5861.2011-3048

Publication date: July 15, 2021

Keywords: quaternary selenide, zero-dimensional structure, [GeSnSe₅]^4- unit, indirect band gap

ABSTRACT

A new quaternary selenide Ba₄Sn₃GeSe₉ was synthesized by high temperature solid state reaction method and fully characterized by elemental analysis, UV-vis spectrum, and single-crystal X-ray diffraction. The title compound crystallizes in the orthorhombic space group Pnma with a = 12.463(3), b = 9.308(2) and c = 17.892(5) Å. Ba₄Sn₃GeSe₉ can be characterized by a zero-dimensional compound composed by special [GeSnSe₅]^4- units, [Sn₂Se₄]^4- units and the adjacent cations Ba²⁺ ions. The [GeSnSe₅]^4- unit is composed of a SnSe₃ trigonal pyramid formed by divalent Sn²⁺ and edge-sharing with a GeSe₄ tetrahedron, and the [Sn₂Se₄]^4- unit is composed of two SnSe₃ trigonal pyramids. Ba₄Sn₃GeSe₉ is an indirect semiconductor with a band gap of 1.21 eV.